By Adolf Goetzberger, Joachim Knobloch, Bernhard Voss
As environmental matters increase, solar energy is more and more obvious as an enticing substitute strength resource. Crystalline Silicon sunlight Cells addresses the sensible and theoretical matters primary to the potential conversion of sun into electrical energy. Written by way of 3 the world over popular specialists, this precious reference gains from effects and adventure received from study on the Fraunhofer Institute for solar power platforms. positive aspects comprise: creation to the foundations of photovoltaics, offering a grounding in semiconductor physics for the amateur reader unique emphasis at the equipment of accomplishing excessive potency and thereby least expensive solar energy exam of the physics, layout and expertise of crystalline silicon sun cells, particularly skinny movie cells Survey of a range of other phone kinds equipping the reader with an entire review unique description of measuring and research thoughts to facilitate selecting actual semiconductor and sunlight mobilephone parameters available to these with a simple wisdom of physics and arithmetic, this can be a very good introductory ebook for college kids learning strong country and semiconductor physics. All these operating in photovoltaic improvement and construction will locate Crystalline Silicon sun Cells an essential source.
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Additional info for Crystalline Silicon Solar Cells
1 BASIC EQUATIONS At the beginning of this chapter, the basic equations are summed up once again as follows: 1. 2) 2. 3) 3. 2 Crystalline Silicon Solar Cells SPACE CHARGE REGION To understand the function of semiconductor devices and thus of solar cells, a precise understanding of the processes within a p-n junction is crucial. The base unit of many semiconductor devices is a semiconductor body, in which two different dopants directly adjoin one another. This is called a p-n junction if a p-doped area merges into an n-doped area within the same lattice.
Phys. Rev. 83, 1951, p. 228 Sah C. T. , Phys. Rev. 109, 1957, p. 109 Sah C. , et al, Solid State Electron. 13, 1970, p. 759 Shockley W. and Read W. , Phys. Rev. 94, 1954, p. 1558 Landsberg P. T. and Kousik G. , J . Appl. Phys. 56, 1983, p. 1696 Hu C. and Oldham W. , Appl. Phys. Lett. 35, 1979, p. 636 Bennett H. , Solid State Electron. , 1984, p. 893 Tyagi M. , J . Appl. Phys. 54, 1983, p. 2857 Fossum J. , Mertens R. , Lee D. S. and Nijs J. , Solid State Electron. 26, 1983, p. 569 Tyagi M. S. and v.
14 Conduction band energy in relation to crystal momentum (indirect semiconductor) lower than for a direct semiconductor due to the involvement of two different particles. Different experimental measurements exist for crystalline silicon ,. New results have been published in 1995 . 15 shows this relationship between absorption coefficient, absorption length and wavelength. In silicon, the absorption length for light with a wavelength of 1 pm is 140 pm where a = 72 cm-I. Therefore, for a high level of absorption in silicon a crystal thickness of approximately 200 pm is required, unless the light is locked into the crystal using reflection method (optical confinement).